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Graphene: Patent Database2009Application: Large-Area Single- and Few-Layer Graphene on Arbitrary SubstratesKong, Jing, Cecco, Alfonso Reina, Dresselhaus, Mildred S.
Filling Date 04/13/2009Application: REDUCED GRAPHENE OXIDE FILMRobinson, Jeremy T. and Snow, Eric S.Spin coating a mixture of graphene oxide platelets, water, and an organic solvent by placing a drop of the mixture on a spinning substrate while blowing a drying gas onto the substrate and allowing the water and the organic solvent on the substrate to evaporate; and repeating the spin coating one or more times to form a graphene oxide film in contact with the substrate. An about 1-100 nm thick film of overlapping platelets of reduced graphene oxide. Filling Date: 02/06/2009Devices including graphene layers epitaxially grown on single crystal substratesPfeiffer, Loren NeilAn electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate. The hexagonal BN layer has a surface region substantially lattice-matched to graphene, and step (b) includes epitaxially forming at least one graphene layer on the surface region of the hexagonal BN layer. Applications to FETs are described. Publication Date: 11/17/20092008:Application: GRAPHENE SHEET AND METHOD OF PREPARING THE SAMEChoi, Jae-young Shin, Hyeon-jin Yoon, Seon-mi (Yongin-si, KR)thickness includes forming a film, the film comprising a graphitizing catalyst; heat-treating a gaseous carbon source in the presence of the graphitizing catalyst to form graphene; and cooling the graphene to form a graphene sheet. A graphene sheet prepared according to the disclosed method is also described. Filling Date 07/08/2008Application:MANUFACTURING A GRAPHENE DEVICE AND A GRAPHENE NANOSTRUCTURE SOLUTIONHong, Seunghun, Koh, Juntaeechniques for manufacturing a graphene structure solution and a graphene device are provided. A uniform graphene nanostructure solution is produced by applying anisotropic etching on a multi-layered graphene using an oxide nanowire as a mask. A graphene device is manufactured by dipping a substrate with a pattern of a molecule layer in a graphene nanostructure solution so that graphenes are aligned on the substrate with the pattern. Filling Date 09/15/20082004Application: Devices including graphene layers epitaxially grown on single crystal substratesDeheer, Walt A., Berger, Claire, First, Phillip N.In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a crystalline substrate having a preselected crystal face. A thin-film graphitic layer is disposed on the preselected crystal face. The thin-film graphitic layer is patterned so as to define at least one functional structure. Filling Date: 06/03/2004 |